Infineon IRF7480MTRPBF: High-Performance Dual N-Channel MOSFET for Power Management Applications
In the realm of modern electronics, efficient power management is paramount. The Infineon IRF7480MTRPBF stands out as a premier solution, engineered to meet the rigorous demands of today's power conversion and control systems. This dual N-channel MOSFET in a compact PQFN 3.3x3.3mm package integrates two high-performance transistors, offering designers a powerful tool to enhance efficiency, reduce board space, and improve thermal management.
A key strength of the IRF7480MTRPBF lies in its exceptionally low on-state resistance (RDS(on)) of just 6.5 mΩ (max) at VGS = 4.5 V. This minimal resistance is critical for minimizing conduction losses, which directly translates to higher efficiency and reduced heat generation in applications like synchronous buck converters for point-of-load (POL) regulation. The low gate charge (QG) further ensures superior switching performance, enabling operation at higher frequencies without excessive switching losses. This allows for the use of smaller passive components, contributing to more compact and cost-effective power supply designs.
The device is optimized for use in low-voltage environments, featuring a 20V drain-source voltage (VDS) rating, making it ideal for mainstream computing, telecommunications infrastructure, and consumer electronics such as desktop motherboards, servers, and graphics cards. Its dual-channel configuration is particularly advantageous for constructing synchronous rectification stages in DC-DC converters, where both control and synchronous FETs are required in close proximity.
Thermal performance is another area where this component excels. The advanced PQFN package offers an extremely low thermal resistance and an exposed pad that facilitates efficient heat dissipation away from the silicon die. This robust thermal capability ensures reliable operation under continuous high-current conditions, enhancing the overall longevity and reliability of the end product.
Furthermore, the MOSFET is designed with a logic-level gate drive, allowing it to be driven directly from 3.3V or 5V microcontroller outputs. This simplifies the drive circuitry, reduces component count, and lowers system cost.
ICGOOODFIND: The Infineon IRF7480MTRPBF is a top-tier dual N-channel MOSFET that delivers a winning combination of ultra-low RDS(on), fast switching speed, excellent thermal characteristics, and a space-saving package. It is an outstanding choice for designers aiming to maximize power efficiency and power density in a wide array of advanced power management applications.
Keywords: Power Management, Low RDS(on), Synchronous Rectification, Logic-Level Gate, Thermal Efficiency.
