Infineon IPB123N10N3G: High-Performance OptiMOS 3 Power MOSFET for Efficient Power Conversion

In the realm of modern power electronics, achieving high efficiency and reliability is paramount. The Infineon IPB123N10N3G, a member of the esteemed OptiMOS™ 3 family, stands out as a benchmark for high-performance N-channel power MOSFETs. Engineered with cutting-edge technology, this device is specifically designed to meet the rigorous demands of efficient power conversion systems, including switch-mode power supplies (SMPS), DC-DC converters, and motor control applications.

A key highlight of the IPB123N10N3G is its exceptionally low on-state resistance (RDS(on)) of just 2.3 mΩ maximum at 10 V. This ultra-low resistance is crucial for minimizing conduction losses, which directly translates to higher efficiency and reduced heat generation. By operating cooler, systems can achieve greater power density and longevity, making this MOSFET an ideal choice for space-constrained designs.

The device is optimized for fast switching performance, enabling operation at high frequencies. This characteristic is vital for modern power supplies that require smaller passive components, such as inductors and capacitors, leading to more compact and cost-effective solutions. The low gate charge (Qg) of the IPB123N10N3G further enhances its switching efficiency, ensuring quick turn-on and turn-off times without excessive drive power.

Housed in a robust D²PAK (TO-263) package, this MOSFET offers superior thermal performance and reliability. The package is designed for effective heat dissipation, allowing the device to handle high current levels—up to 123 A—with ease. This makes it exceptionally suitable for high-power applications where thermal management is a critical concern.

Moreover, the OptiMOS™ 3 technology ensures high robustness and durability, featuring a high avalanche ruggedness and an extended safe operating area (SOA). These attributes provide designers with a margin of safety in demanding environments, protecting against voltage spikes and overload conditions.

ICGOODFIND: The Infineon IPB123N10N3G OptiMOS™ 3 power MOSFET is a superior component that delivers outstanding efficiency, thermal performance, and reliability. Its combination of ultra-low RDS(on), fast switching capabilities, and robust packaging makes it an excellent solution for advanced power conversion systems striving for maximum performance and miniaturization.

Keywords: Power MOSFET, Efficient Power Conversion, Low RDS(on), Fast Switching, Thermal Performance.