Infineon BSS316NH6327XTSA1: N-Channel MOSFET Datasheet and Application Overview

Release date:2025-10-29 Number of clicks:186

Infineon BSS316NH6327XTSA1: N-Channel MOSFET Datasheet and Application Overview

The Infineon BSS316NH6327XTSA1 is a state-of-the-art N-Channel MOSFET engineered using Infineon’s advanced small-signal MOSFET technology. Housed in a compact SOT-23 package, this component is optimized for high-efficiency switching and amplification in low-voltage applications. With a drain-source voltage (VDS) of 30 V and a continuous drain current (ID) of up to 1.8 A, it offers a robust performance in a minimal footprint, making it ideal for space-constrained PCB designs.

A standout feature of this MOSFET is its exceptionally low on-resistance (RDS(on)), typically just 65 mΩ at 10 V gate-source voltage. This low resistance minimizes conduction losses, improves thermal performance, and increases overall system efficiency. The device also boasts a low gate charge (Qg) and fast switching characteristics, reducing driving losses and making it suitable for high-frequency applications such as DC-DC converters, load switching, and power management circuits.

The BSS316NH6327XTSA1 is designed with a threshold voltage (VGS(th)) as low as 1 V, enhancing its compatibility with low-voltage microcontroller units (MCUs) and digital signal controllers. This feature allows for direct drive from logic-level signals, simplifying circuit design and reducing component count.

Applications span across consumer electronics, automotive systems, portable devices, and IoT modules. It is commonly used in power management functions including battery protection, motor control, LED driving, and DC-DC conversion. Its ability to operate efficiently under low voltages makes it particularly valuable in battery-powered devices where energy conservation is critical.

In summary, the Infineon BSS316NH6327XTSA1 stands out for its high performance, integration-friendly design, and energy-efficient operation.

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ICGOODFIND: A highly efficient N-MOSFET offering excellent switching performance and thermal characteristics for modern low-power electronic systems.

Keywords:

N-Channel MOSFET

Low On-Resistance

Power Management

SOT-23 Package

Logic Level

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