High-Performance Power Conversion with the Infineon IPP65R190CFD 190mΩ Superjunction MOSFET

The relentless pursuit of higher efficiency, greater power density, and enhanced reliability in power conversion systems is a defining challenge for modern electronics. From server power supplies and industrial motor drives to renewable energy inverters and fast chargers, the performance of the power switch remains paramount. At the heart of many of these advanced designs is the Infineon IPP65R190CFD, a 190mΩ Superjunction MOSFET that sets a new benchmark for performance.

This device leverages Infineon's proprietary CoolMOS™ CFD7 technology, representing the seventh generation of their renowned superjunction MOSFET family. The core innovation lies in its revolutionary superjunction structure, which enables an exceptionally low specific on-state resistance (RDS(on)) for a given die size. The 190mΩ rating is a key indicator of its low conduction losses, meaning less energy is wasted as heat when the device is switched on. This directly translates to higher overall system efficiency and reduces the thermal management burden.

Beyond low RDS(on), the CFD7 technology integrates a fast and robust body diode. This is a critical feature for applications like power factor correction (PFC) and bridge topologies that operate in continuous conduction mode (CCM). The diode exhibits excellent reverse recovery characteristics, significantly reducing switching losses and electromagnetic interference (EMI) that are typically associated with the diode's commutation. This results in smoother, cleaner, and more efficient switching cycles.

Furthermore, the IPP65R190CFD is designed for ease of use and durability. Housed in a TO-220 FullPAK package, it offers a fully isolated mounting surface, simplifying the assembly process and improving safety by eliminating the need for an additional insulation kit. Its high peak current capability and exceptional avalanche ruggedness ensure reliable operation even under the most demanding conditions, such as overloads and voltage spikes.

Designers will appreciate the device's excellent switching performance, which allows for higher switching frequencies. This capability is essential for shrinking the size of magnetic components like inductors and transformers, thereby enabling the development of more compact and lighter power supplies without sacrificing output power or performance.

ICGOOODFIND: The Infineon IPP65R190CFD exemplifies the pinnacle of Superjunction MOSFET technology, delivering an optimal blend of ultra-low conduction loss, superior switching performance, and robust reliability. It is an ideal solution for engineers aiming to push the boundaries of efficiency and power density in next-generation SMPS, EV charging stations, and solar inverters.

Keywords: Superjunction MOSFET, High-Efficiency, Power Density, CoolMOS™ CFD7, Switching Performance.